Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (R s ) values and Hall effect measured activ...

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Hauptverfasser:	Bersani, M., Pepponi, G., Giubertoni, D., Gennaro, S., Sahiner, M.A., Kelty, S.P., Kah, M., Kirkby, K.J., Doherty, R., Foad, M.A., Meirer, F., Streli, C., Woicik, J.C., Pianetta, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrical resistance measurement Electromagnetic wave absorption Epitaxial growth Hall effect Mass spectroscopy Particle measurements Rapid thermal annealing Rapid thermal processing Solid lasers X-ray lasers
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Beschreibung
Zusammenfassung:	In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (R s ) values and Hall effect measured active carrier doses are interpreted after investigation by secondary ion mass spectrometry (SIMS) and extended x-ray absorption fine structure (EXAFS).
DOI:	10.1109/IWJT.2009.5166221