Unified compact modeling for Bulk/SOI/FinFET/SiNW MOSFETs

This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fully-depleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact m...

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Hauptverfasser: Xing Zhou, Guojun Zhu, Guan Huei See, Junbin Zhang, Shihuan Lin, Chengqing Wei, Zuhui Chen, Srikanth, M., Yafei Yan, Selvakumar, R., Chandra, W.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fully-depleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach.
DOI:10.1109/EDST.2009.5166097