Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications
Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous in...
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| creator | Gutierrez-Aitken, A. Chang-Chien, P. Wen Phan Scott, D. Oyama, B. Sandhu, R. Zhou, J. Nam, P. Hennig, K. Parlee, M. Poust, B. Khanh Thai Geiger, C. Oki, A. Kagiwada, R. |
| description | Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in ADC dynamic range and bandwidth. |
| doi_str_mv | 10.1109/MWSYM.2009.5165895 |
| format | Conference Proceeding |
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| identifier | ISSN: 0149-645X |
| ispartof | 2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1109-1112 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_5165895 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analog-digital conversion Bandwidth CMOS process CMOS technology CMOSFETs Dynamic range Heterogeneous Integration Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide Semiconductor materials Silicon Space technology |
| title | Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications |
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