Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications

Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications

Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous in...

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Hauptverfasser: Gutierrez-Aitken, A., Chang-Chien, P., Wen Phan, Scott, D., Oyama, B., Sandhu, R., Zhou, J., Nam, P., Hennig, K., Parlee, M., Poust, B., Khanh Thai, Geiger, C., Oki, A., Kagiwada, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analog-digital conversion
Bandwidth
CMOS process
CMOS technology
CMOSFETs
Dynamic range
Heterogeneous Integration
Heterojunction bipolar transistors
III-V semiconductor materials
Indium phosphide
Semiconductor materials
Silicon
Space technology
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Beschreibung
Zusammenfassung:Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in ADC dynamic range and bandwidth.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5165895