A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations

A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency > 74% and PAE > 71%, when using 2 nd -harmonic input tuning. The highest in-band efficiency performance is observed at 2.14 GHz from a 40 V supp...

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Hauptverfasser:	van der Heijden, M.P., Acar, M., Vromans, J.S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Base station Base stations broadband Broadband amplifiers Capacitance Circuits class-E Gallium nitride gallium nitride (GaN) HEMTs high electron mobility transistor (HEMT) High power amplifiers power amplifier (PA) Power amplifiers Power generation power-added efficiency (PAE) RF circuit design
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Beschreibung
Zusammenfassung:	A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency > 74% and PAE > 71%, when using 2 nd -harmonic input tuning. The highest in-band efficiency performance is observed at 2.14 GHz from a 40 V supply with peak drain-efficiency of 77.3% and peak PAE of 74.0% at 12 W output power and 14 dB gain. The best broadband output power performance is observed from 2.1-2.7 GHz without 2 nd -harmonic input tuning, where the output power variation is within 1.5 dB and power efficiency is between 53% and 66%.
ISSN:	0149-645X 2576-7216
DOI:	10.1109/MWSYM.2009.5165782