Low capacitance approaches for 22nm generation Cu interconnect

Various integration approaches, including homogeneous porous Low-k and air gaps, for low-capacitance solution were investigated for 22 nm Cu interconnect technology and beyond. For homogeneous Low-k approach, K=2.0 Low-k material is successfully integrated with Cu. Up to 15% line to line capacitance...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bao, T.I., Chen, H.C., Lee, C.J., Lu, H.H., Shue, S.L., Yu, C.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Air gaps Capacitance Dielectric constant Etching Materials science and technology Semiconductor device manufacture Semiconductor materials Slurries Surface resistance Thermal degradation
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