Combined Lateral Vertical RESURF (CLAVER) LDMOS structure

Combined Lateral Vertical RESURF (CLAVER) LDMOS structure

In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade-off. The proposed device uses standard process st...

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Bibliographische Detailangaben
Hauptverfasser: Khan, T., Khemka, V., Ronghua Zhu, Weixiao Huang, Xu Cheng, Hui, P., Muh-ling Ger, Grote, B., Rodriquez, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Automotive engineering
Costs
Electric breakdown
Immune system
Voltage
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Beschreibung
Zusammenfassung:In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade-off. The proposed device uses standard process steps available in integrated technology platforms to give a breakdown as high as 150 V with ground-breaking on-state resistance of 159 mOhm-mm 2 .
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2009.5157989