Evaluative analysis of 2- and 3-level DC/DC converters for high-voltage high-power applications

Evaluative analysis of 2- and 3-level DC/DC converters for high-voltage high-power applications

This paper is focused on the high-voltage (ges2 kV) high-power (ges20 kW) isolated DC/DC converters. The 3.3 kV IGBT based three-level half-bridge inverter topology was analyzed as an alternative to the two-level half-bridge with 6.5 kV IGBTs. The properties of primary switches, theirs selection pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Vinnikov, D., Egorov, M., Strzelecki, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitors
Circuit topology
Clamps
DC-DC power converters
Insulated gate bipolar transistors
Inverters
Isolation technology
Semiconductor diodes
Switches
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper is focused on the high-voltage (ges2 kV) high-power (ges20 kW) isolated DC/DC converters. The 3.3 kV IGBT based three-level half-bridge inverter topology was analyzed as an alternative to the two-level half-bridge with 6.5 kV IGBTs. The properties of primary switches, theirs selection procedure as well as inverter loss distribution, design challenges, costs of semiconductors and passive components of both concurrent topologies were evaluated and compared. The overall feasibility of two- and three-level inverter topologies was compared for the selected application and final recommendations are given.
ISSN:2166-9538
2166-9546
DOI:10.1109/CPE.2009.5156073