Power silicon carbide devices based on Lely grown substrates

This paper presents some experimental data relating to SiC devices based on substrates grown by the Lely method. These devices were developed on p- and n-type epilayers grown by the method of sublimation on the (0001)Si plane of the substrates. Investigation of devices parameters in the wide tempera...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lebedev, A.A., Andreev, A.N., Anikin, M.M., Rastegaeva, M.G., Savkina, N.S., Strelchuk, A.M., Syrkin, A.L., Tregubova, A.S., Chelnokov, V.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Crystals Dry etching Photonic band gap Plasma applications Reflection Silicon carbide Spontaneous emission Substrates Surface topography Temperature
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