Power silicon carbide devices based on Lely grown substrates

This paper presents some experimental data relating to SiC devices based on substrates grown by the Lely method. These devices were developed on p- and n-type epilayers grown by the method of sublimation on the (0001)Si plane of the substrates. Investigation of devices parameters in the wide temperature region of 300-800 K were made. In these devices, parameters and concentration of deep centers and there influence on the processes of radiationless recombination have been investigated.