A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications

A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications

Describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path to form a BiMOS transistor.

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Bibliographische Detailangaben
Hauptverfasser: Yallup, K., Edwards, S., Creighton, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Bipolar transistors
CMOS process
MOS devices
Semiconductor films
Silicon
Springs
Textile industry
Voltage
Wafer bonding
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Beschreibung
Zusammenfassung:Describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path to form a BiMOS transistor.
DOI:10.1109/SOI.1994.514228