Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROMs

Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROMs

Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good a...

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Bibliographische Detailangaben
Hauptverfasser: Chimoon Huang, Tahui Wang, Chen, T., Peng, N.C., Chang, A., Shone, F.C.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Analytical models
Charge carrier processes
Electrons
EPROM
Hot carrier effects
Hot carriers
Medical simulation
MOSFET circuits
Threshold voltage
Tunneling
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Beschreibung
Zusammenfassung:Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.
DOI:10.1109/RELPHY.1995.513655