Approach for developing a large signal model of a 150 GHz HEMT

Approach for developing a large signal model of a 150 GHz HEMT

In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Diskus, C.G., Bergamaschi, C., Schefer, M., Patrick, W., Klepser, B.-U.H., Baechtold, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
Circuit testing
Electrical resistance measurement
Electromagnetic fields
HEMTs
Laboratories
Predictive models
Scattering parameters
Solid modeling
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 137
container_issue
container_start_page 133
container_title
container_volume
creator Diskus, C.G.
Bergamaschi, C.
Schefer, M.
Patrick, W.
Klepser, B.-U.H.
Baechtold, W.
description In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.
doi_str_mv 10.1109/INMMC.1994.512518
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_512518</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>512518</ieee_id><sourcerecordid>512518</sourcerecordid><originalsourceid>FETCH-LOGICAL-i118t-d92e14c11738cdc7764be11d1060898b9e63bac278ce05ea89f014a068606dd43</originalsourceid><addsrcrecordid>eNotj1FLwzAUhQMqOGZ_gD7lD7Tem6Rp8iKMMtfBqi_zeaTJbQ10a2lF0F9vYcKBA9_D4TuMPSJkiGCf9291XWZorcpyFDmaG5bYwsASKRRYvGUrsNKkBoS5Z8k8xwYQdKEE6BV72YzjNDj_ydth4oG-qR_GeOm4472bOuJz7C6u5-chUM-HduGYA99Vv7za1scHdte6fqbkv9fs43V7LKv08L7bl5tDGhHNVxqsIFQesZDGB18UWjWEGBYPMNY0lrRsnBeF8QQ5OWNbQOVAGw06BCXX7Om6G4noNE7x7Kaf0_Ww_ANwCUbE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Approach for developing a large signal model of a 150 GHz HEMT</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B.-U.H. ; Baechtold, W.</creator><creatorcontrib>Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B.-U.H. ; Baechtold, W.</creatorcontrib><description>In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.</description><identifier>ISSN: 0938-8028</identifier><identifier>ISBN: 9780780324091</identifier><identifier>ISBN: 0780324099</identifier><identifier>DOI: 10.1109/INMMC.1994.512518</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit simulation ; Circuit testing ; Electrical resistance measurement ; Electromagnetic fields ; HEMTs ; Laboratories ; Predictive models ; Scattering parameters ; Solid modeling ; Voltage</subject><ispartof>Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994, p.133-137</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/512518$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/512518$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Diskus, C.G.</creatorcontrib><creatorcontrib>Bergamaschi, C.</creatorcontrib><creatorcontrib>Schefer, M.</creatorcontrib><creatorcontrib>Patrick, W.</creatorcontrib><creatorcontrib>Klepser, B.-U.H.</creatorcontrib><creatorcontrib>Baechtold, W.</creatorcontrib><title>Approach for developing a large signal model of a 150 GHz HEMT</title><title>Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits</title><addtitle>INMMC</addtitle><description>In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.</description><subject>Circuit simulation</subject><subject>Circuit testing</subject><subject>Electrical resistance measurement</subject><subject>Electromagnetic fields</subject><subject>HEMTs</subject><subject>Laboratories</subject><subject>Predictive models</subject><subject>Scattering parameters</subject><subject>Solid modeling</subject><subject>Voltage</subject><issn>0938-8028</issn><isbn>9780780324091</isbn><isbn>0780324099</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1FLwzAUhQMqOGZ_gD7lD7Tem6Rp8iKMMtfBqi_zeaTJbQ10a2lF0F9vYcKBA9_D4TuMPSJkiGCf9291XWZorcpyFDmaG5bYwsASKRRYvGUrsNKkBoS5Z8k8xwYQdKEE6BV72YzjNDj_ydth4oG-qR_GeOm4472bOuJz7C6u5-chUM-HduGYA99Vv7za1scHdte6fqbkv9fs43V7LKv08L7bl5tDGhHNVxqsIFQesZDGB18UWjWEGBYPMNY0lrRsnBeF8QQ5OWNbQOVAGw06BCXX7Om6G4noNE7x7Kaf0_Ww_ANwCUbE</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Diskus, C.G.</creator><creator>Bergamaschi, C.</creator><creator>Schefer, M.</creator><creator>Patrick, W.</creator><creator>Klepser, B.-U.H.</creator><creator>Baechtold, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Approach for developing a large signal model of a 150 GHz HEMT</title><author>Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B.-U.H. ; Baechtold, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-d92e14c11738cdc7764be11d1060898b9e63bac278ce05ea89f014a068606dd43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Circuit simulation</topic><topic>Circuit testing</topic><topic>Electrical resistance measurement</topic><topic>Electromagnetic fields</topic><topic>HEMTs</topic><topic>Laboratories</topic><topic>Predictive models</topic><topic>Scattering parameters</topic><topic>Solid modeling</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Diskus, C.G.</creatorcontrib><creatorcontrib>Bergamaschi, C.</creatorcontrib><creatorcontrib>Schefer, M.</creatorcontrib><creatorcontrib>Patrick, W.</creatorcontrib><creatorcontrib>Klepser, B.-U.H.</creatorcontrib><creatorcontrib>Baechtold, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Diskus, C.G.</au><au>Bergamaschi, C.</au><au>Schefer, M.</au><au>Patrick, W.</au><au>Klepser, B.-U.H.</au><au>Baechtold, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Approach for developing a large signal model of a 150 GHz HEMT</atitle><btitle>Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits</btitle><stitle>INMMC</stitle><date>1994</date><risdate>1994</risdate><spage>133</spage><epage>137</epage><pages>133-137</pages><issn>0938-8028</issn><isbn>9780780324091</isbn><isbn>0780324099</isbn><abstract>In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.</abstract><pub>IEEE</pub><doi>10.1109/INMMC.1994.512518</doi><tpages>5</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0938-8028
ispartof Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994, p.133-137
issn 0938-8028
language eng
recordid cdi_ieee_primary_512518
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuit simulation
Circuit testing
Electrical resistance measurement
Electromagnetic fields
HEMTs
Laboratories
Predictive models
Scattering parameters
Solid modeling
Voltage
title Approach for developing a large signal model of a 150 GHz HEMT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T14%3A30%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Approach%20for%20developing%20a%20large%20signal%20model%20of%20a%20150%20GHz%20HEMT&rft.btitle=Third%20International%20Workshop%20on%20Integrated%20Nonlinear%20Microwave%20and%20Millimeterwave%20Circuits&rft.au=Diskus,%20C.G.&rft.date=1994&rft.spage=133&rft.epage=137&rft.pages=133-137&rft.issn=0938-8028&rft.isbn=9780780324091&rft.isbn_list=0780324099&rft_id=info:doi/10.1109/INMMC.1994.512518&rft_dat=%3Cieee_6IE%3E512518%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=512518&rfr_iscdi=true