Approach for developing a large signal model of a 150 GHz HEMT

Approach for developing a large signal model of a 150 GHz HEMT

In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result...

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Bibliographische Detailangaben
Hauptverfasser: Diskus, C.G., Bergamaschi, C., Schefer, M., Patrick, W., Klepser, B.-U.H., Baechtold, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
Circuit testing
Electrical resistance measurement
Electromagnetic fields
HEMTs
Laboratories
Predictive models
Scattering parameters
Solid modeling
Voltage
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Beschreibung
Zusammenfassung:In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.
ISSN:0938-8028
DOI:10.1109/INMMC.1994.512518