Applications of a generalized Dirichlet principle to transistor modeling

Applications of a generalized Dirichlet principle to transistor modeling

We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.

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Bibliographische Detailangaben
Hauptverfasser: Winson, P., Snider, A.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boundary conditions
Data mining
Electric variables measurement
Integral equations
Mathematical model
MESFETs
Poisson equations
Scattering parameters
Transconductance
Voltage
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Beschreibung
Zusammenfassung:We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.
DOI:10.1109/SECON.1996.510104