Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing

Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing

Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.

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Bibliographische Detailangaben
Hauptverfasser: Gaudin, D., Boyer, J.M., Dayid, J.P., Vadrot, J.F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
CMOS technology
Computer aided software engineering
Interface states
Inverters
MOS devices
MOSFETs
Space technology
Testing
Threshold voltage
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Beschreibung
Zusammenfassung:Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.
DOI:10.1109/RADECS.1995.509783