Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects
RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by he...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 115 |
|---|---|
| container_issue | |
| container_start_page | 113 |
| container_title | |
| container_volume | |
| creator | Torazawa, N. Hinomura, T. Mori, K. Koyama, Y. Hirao, S. Kobori, E. Korogi, H. Maekawa, K. Tomita, K. Chibahara, H. Suzumura, N. Asai, K. Miyatake, H. Matsumoto, S. |
| description | RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects. |
| doi_str_mv | 10.1109/IITC.2009.5090356 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5090356</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5090356</ieee_id><sourcerecordid>5090356</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-4076e196ddb0c56f615dab16297d222c7f22368253c0e6b1c642e95477f4cb6e3</originalsourceid><addsrcrecordid>eNpVkN1KwzAcxePHwDn3AOJNXqAz-eeruZQydTAUpIJ3M00TiXRNSbuLvb0tDsFzczgczu_iIHRLyYpSou83m7JYASF6JYgmTMgztNQqpxz4KM30OZoDy0kmGcsv_nUAl38dfMzQ9YSZGJpfoWXff5NRXDCi-Rx9rr13duhx9PgF17EL7RcOLX47ZKXBpmniEVcmpeASji32odnjLsXOpeGITVvj5JpgqtCEMfuYcHEY54NLNrbtBL5BM2-a3i1PvkDvj-uyeM62r0-b4mGbBarEkHGipKNa1nVFrJBeUlGbikrQqgYAqzwAkzkIZomTFbWSg9OCK-W5raRjC3T3yw3OuV2Xwt6k4-50HvsBJz9bkA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Torazawa, N. ; Hinomura, T. ; Mori, K. ; Koyama, Y. ; Hirao, S. ; Kobori, E. ; Korogi, H. ; Maekawa, K. ; Tomita, K. ; Chibahara, H. ; Suzumura, N. ; Asai, K. ; Miyatake, H. ; Matsumoto, S.</creator><creatorcontrib>Torazawa, N. ; Hinomura, T. ; Mori, K. ; Koyama, Y. ; Hirao, S. ; Kobori, E. ; Korogi, H. ; Maekawa, K. ; Tomita, K. ; Chibahara, H. ; Suzumura, N. ; Asai, K. ; Miyatake, H. ; Matsumoto, S.</creatorcontrib><description>RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects.</description><identifier>ISSN: 2380-632X</identifier><identifier>ISBN: 9781424444922</identifier><identifier>ISBN: 1424444926</identifier><identifier>EISSN: 2380-6338</identifier><identifier>EISBN: 9781424444939</identifier><identifier>EISBN: 1424444934</identifier><identifier>DOI: 10.1109/IITC.2009.5090356</identifier><identifier>LCCN: 2009903594</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Argon ; Chemical vapor deposition ; Copper alloys ; Integrated circuit interconnections ; Scanning electron microscopy ; Semiconductor device doping ; Semiconductor films ; Ultra large scale integration ; X-ray scattering</subject><ispartof>2009 IEEE International Interconnect Technology Conference, 2009, p.113-115</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5090356$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5090356$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Torazawa, N.</creatorcontrib><creatorcontrib>Hinomura, T.</creatorcontrib><creatorcontrib>Mori, K.</creatorcontrib><creatorcontrib>Koyama, Y.</creatorcontrib><creatorcontrib>Hirao, S.</creatorcontrib><creatorcontrib>Kobori, E.</creatorcontrib><creatorcontrib>Korogi, H.</creatorcontrib><creatorcontrib>Maekawa, K.</creatorcontrib><creatorcontrib>Tomita, K.</creatorcontrib><creatorcontrib>Chibahara, H.</creatorcontrib><creatorcontrib>Suzumura, N.</creatorcontrib><creatorcontrib>Asai, K.</creatorcontrib><creatorcontrib>Miyatake, H.</creatorcontrib><creatorcontrib>Matsumoto, S.</creatorcontrib><title>Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects</title><title>2009 IEEE International Interconnect Technology Conference</title><addtitle>IITC</addtitle><description>RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects.</description><subject>Annealing</subject><subject>Argon</subject><subject>Chemical vapor deposition</subject><subject>Copper alloys</subject><subject>Integrated circuit interconnections</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor device doping</subject><subject>Semiconductor films</subject><subject>Ultra large scale integration</subject><subject>X-ray scattering</subject><issn>2380-632X</issn><issn>2380-6338</issn><isbn>9781424444922</isbn><isbn>1424444926</isbn><isbn>9781424444939</isbn><isbn>1424444934</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkN1KwzAcxePHwDn3AOJNXqAz-eeruZQydTAUpIJ3M00TiXRNSbuLvb0tDsFzczgczu_iIHRLyYpSou83m7JYASF6JYgmTMgztNQqpxz4KM30OZoDy0kmGcsv_nUAl38dfMzQ9YSZGJpfoWXff5NRXDCi-Rx9rr13duhx9PgF17EL7RcOLX47ZKXBpmniEVcmpeASji32odnjLsXOpeGITVvj5JpgqtCEMfuYcHEY54NLNrbtBL5BM2-a3i1PvkDvj-uyeM62r0-b4mGbBarEkHGipKNa1nVFrJBeUlGbikrQqgYAqzwAkzkIZomTFbWSg9OCK-W5raRjC3T3yw3OuV2Xwt6k4-50HvsBJz9bkA</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Torazawa, N.</creator><creator>Hinomura, T.</creator><creator>Mori, K.</creator><creator>Koyama, Y.</creator><creator>Hirao, S.</creator><creator>Kobori, E.</creator><creator>Korogi, H.</creator><creator>Maekawa, K.</creator><creator>Tomita, K.</creator><creator>Chibahara, H.</creator><creator>Suzumura, N.</creator><creator>Asai, K.</creator><creator>Miyatake, H.</creator><creator>Matsumoto, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200906</creationdate><title>Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects</title><author>Torazawa, N. ; Hinomura, T. ; Mori, K. ; Koyama, Y. ; Hirao, S. ; Kobori, E. ; Korogi, H. ; Maekawa, K. ; Tomita, K. ; Chibahara, H. ; Suzumura, N. ; Asai, K. ; Miyatake, H. ; Matsumoto, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-4076e196ddb0c56f615dab16297d222c7f22368253c0e6b1c642e95477f4cb6e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Annealing</topic><topic>Argon</topic><topic>Chemical vapor deposition</topic><topic>Copper alloys</topic><topic>Integrated circuit interconnections</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor device doping</topic><topic>Semiconductor films</topic><topic>Ultra large scale integration</topic><topic>X-ray scattering</topic><toplevel>online_resources</toplevel><creatorcontrib>Torazawa, N.</creatorcontrib><creatorcontrib>Hinomura, T.</creatorcontrib><creatorcontrib>Mori, K.</creatorcontrib><creatorcontrib>Koyama, Y.</creatorcontrib><creatorcontrib>Hirao, S.</creatorcontrib><creatorcontrib>Kobori, E.</creatorcontrib><creatorcontrib>Korogi, H.</creatorcontrib><creatorcontrib>Maekawa, K.</creatorcontrib><creatorcontrib>Tomita, K.</creatorcontrib><creatorcontrib>Chibahara, H.</creatorcontrib><creatorcontrib>Suzumura, N.</creatorcontrib><creatorcontrib>Asai, K.</creatorcontrib><creatorcontrib>Miyatake, H.</creatorcontrib><creatorcontrib>Matsumoto, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Torazawa, N.</au><au>Hinomura, T.</au><au>Mori, K.</au><au>Koyama, Y.</au><au>Hirao, S.</au><au>Kobori, E.</au><au>Korogi, H.</au><au>Maekawa, K.</au><au>Tomita, K.</au><au>Chibahara, H.</au><au>Suzumura, N.</au><au>Asai, K.</au><au>Miyatake, H.</au><au>Matsumoto, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects</atitle><btitle>2009 IEEE International Interconnect Technology Conference</btitle><stitle>IITC</stitle><date>2009-06</date><risdate>2009</risdate><spage>113</spage><epage>115</epage><pages>113-115</pages><issn>2380-632X</issn><eissn>2380-6338</eissn><isbn>9781424444922</isbn><isbn>1424444926</isbn><eisbn>9781424444939</eisbn><eisbn>1424444934</eisbn><abstract>RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2009.5090356</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2380-632X |
| ispartof | 2009 IEEE International Interconnect Technology Conference, 2009, p.113-115 |
| issn | 2380-632X 2380-6338 |
| language | eng |
| recordid | cdi_ieee_primary_5090356 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Argon Chemical vapor deposition Copper alloys Integrated circuit interconnections Scanning electron microscopy Semiconductor device doping Semiconductor films Ultra large scale integration X-ray scattering |
| title | Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T20%3A00%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Effects%20of%20N%20doping%20in%20Ru-Ta%20alloy%20barrier%20on%20film%20property%20and%20reliability%20for%20Cu%20interconnects&rft.btitle=2009%20IEEE%20International%20Interconnect%20Technology%20Conference&rft.au=Torazawa,%20N.&rft.date=2009-06&rft.spage=113&rft.epage=115&rft.pages=113-115&rft.issn=2380-632X&rft.eissn=2380-6338&rft.isbn=9781424444922&rft.isbn_list=1424444926&rft_id=info:doi/10.1109/IITC.2009.5090356&rft_dat=%3Cieee_6IE%3E5090356%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424444939&rft.eisbn_list=1424444934&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5090356&rfr_iscdi=true |