Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects

RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by he...

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Bibliographische Detailangaben
Hauptverfasser:	Torazawa, N., Hinomura, T., Mori, K., Koyama, Y., Hirao, S., Kobori, E., Korogi, H., Maekawa, K., Tomita, K., Chibahara, H., Suzumura, N., Asai, K., Miyatake, H., Matsumoto, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Argon Chemical vapor deposition Copper alloys Integrated circuit interconnections Scanning electron microscopy Semiconductor device doping Semiconductor films Ultra large scale integration X-ray scattering
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Beschreibung
Zusammenfassung:	RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects.
ISSN:	2380-632X 2380-6338
DOI:	10.1109/IITC.2009.5090356