A method to improve spectral resolution in planar semiconductor gamma-ray detectors

A method to improve spectral resolution in planar semiconductor gamma-ray detectors

This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. The method is demonstrated to be an improvement over available systems, and application to experimental data is shown.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1996-06, Vol.43 (3), p.1365-1368
Hauptverfasser: Keele, B.D., Addleman, R.S., Troyer, G.L.
Format: Artikel
Sprache:eng
Schlagworte:
CDTE SEMICONDUCTOR DETECTORS
Coaxial components
Costs
Electron traps
ENERGY SPECTRA
GAMMA DETECTION
Gamma ray detection
Gamma ray detectors
GAMMA SPECTROSCOPY
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Instruments
Partial response channels
PULSE CIRCUITS
PULSE RISE TIME
Pulse shaping methods
Region 1
SEMICONDUCTOR DETECTORS
Shape
ZINC TELLURIDES
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Beschreibung
Zusammenfassung:This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. The method is demonstrated to be an improvement over available systems, and application to experimental data is shown.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.507066