High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox/\hbox Insulators

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox/\hbox Insulators

We have fabricated high-kappa Ni/TiO 2 /ZrO 2 /TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10 -8 A/cm 2 at 125degC was obtained with a high 38- fF/mum 2 capacitance density and better than the ZrO 2 MIM capacitors. The excellent device performance is due to the lower...

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Veröffentlicht in:IEEE electron device letters 2009-07, Vol.30 (7), p.715-717
Hauptverfasser: Lin, S.H., Chiang, K.C., Chin, A., Yeh, F.S.
Format: Artikel
Sprache:eng
Schlagworte:
Atherosclerosis
Capacitance
Dielectrics
Electrodes
hbox{TiO}_{2}
hbox{ZrO}_{2}
high kappa
Insulation
Leakage current
metal-insulator-metal (MIM)
MIM capacitors
Random access memory
Surface resistance
Tin
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Zusammenfassung:We have fabricated high-kappa Ni/TiO 2 /ZrO 2 /TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10 -8 A/cm 2 at 125degC was obtained with a high 38- fF/mum 2 capacitance density and better than the ZrO 2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO 2 /ZrO 2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO 2 as compared with that of ZrO 2 to preserve the high capacitance density.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2022775