HREM analysis of ultra-thin oxides

Ultra-thin SiO/sub 2/ layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sinclair, R., Niwa, M., Kouzaki, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electron microscopy Fabrication Image resolution Lattices Rough surfaces Spatial resolution Surface cleaning Surface roughness Surface treatment Tunneling
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