HREM analysis of ultra-thin oxides

HREM analysis of ultra-thin oxides

Ultra-thin SiO/sub 2/ layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Sinclair, R., Niwa, M., Kouzaki, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electron microscopy
Fabrication
Image resolution
Lattices
Rough surfaces
Spatial resolution
Surface cleaning
Surface roughness
Surface treatment
Tunneling
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Beschreibung
Zusammenfassung:Ultra-thin SiO/sub 2/ layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustrated here for gate oxides and tunneling oxides.
DOI:10.1109/ICSICT.1995.503545