26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structu...

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Hauptverfasser: Yagi, H., Koyama, K., Onishi, Y., Yoshinaga, H., Ichikawa, H., Kaida, N., Nomaguchi, T., Hiratsuka, K., Uesaka, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Distributed feedback devices
Indium phosphide
Laser feedback
Lithography
Optical device fabrication
Optical transmitters
Polymers
Quantum well devices
Semiconductor lasers
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creator Yagi, H.
Koyama, K.
Onishi, Y.
Yoshinaga, H.
Ichikawa, H.
Kaida, N.
Nomaguchi, T.
Hiratsuka, K.
Uesaka, K.
description 26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25degC.
doi_str_mv 10.1109/ICIPRM.2009.5012445
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bandwidth
Distributed feedback devices
Indium phosphide
Laser feedback
Lithography
Optical device fabrication
Optical transmitters
Polymers
Quantum well devices
Semiconductor lasers
title 26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer
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