26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structu...

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Hauptverfasser: Yagi, H., Koyama, K., Onishi, Y., Yoshinaga, H., Ichikawa, H., Kaida, N., Nomaguchi, T., Hiratsuka, K., Uesaka, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Distributed feedback devices
Indium phosphide
Laser feedback
Lithography
Optical device fabrication
Optical transmitters
Polymers
Quantum well devices
Semiconductor lasers
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Zusammenfassung:26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25degC.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2009.5012445