ZrN as barrier film between Au and SiO/sub 2/: microstructural stability of the system

ZrN as barrier film between Au and SiO/sub 2/: microstructural stability of the system

The microstructural stability of ZrN/Au structures sputtered onto oxidized Si substrates was studied. The analyses of surface morphology and in depth microstructural changes after thermal activation up to 500/spl deg/C, 30 min. were enabled by sequential low energy ion bombardment. The analysis was...

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Bibliographische Detailangaben
Hauptverfasser: Popovic, N., Bogdanov, Z., Goncic, B., Zlatanovic, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Atmosphere
Gold
Microstructure
Semiconductor films
Sputtering
Stability
Substrates
Surface morphology
X-ray scattering
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Zusammenfassung:The microstructural stability of ZrN/Au structures sputtered onto oxidized Si substrates was studied. The analyses of surface morphology and in depth microstructural changes after thermal activation up to 500/spl deg/C, 30 min. were enabled by sequential low energy ion bombardment. The analysis was performed by SEM, STM, AES and ESCA methods. Formation of oxide on the upper surface of the system and micropore development in the gold film for vacuum annealing was analyzed. The best microstructural stability was obtained for ZrN/Au structures annealed in N/sub 2/ atmosphere.
DOI:10.1109/ICMEL.1995.500838