Study of a MOS imaging sensor with PIN structure

We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.

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Bibliographische Detailangaben
Hauptverfasser: Youshu-Huang, Weian-Zhu, Qingyi He, Guolin-Lu, Peng-Lin
Format: Tagungsbericht
Sprache:eng
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