Study of a MOS imaging sensor with PIN structure

We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.

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Bibliographische Detailangaben
Hauptverfasser:	Youshu-Huang, Weian-Zhu, Qingyi He, Guolin-Lu, Peng-Lin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Charge-coupled image sensors Circuits Conductivity High-resolution imaging Image sensors Photodiodes Sampling methods Sensor arrays Switches
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Beschreibung
Zusammenfassung:	We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.
DOI:	10.1109/ICSICT.1995.499772