Study of a MOS imaging sensor with PIN structure
We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.
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creator | Youshu-Huang Weian-Zhu Qingyi He Guolin-Lu Peng-Lin |
description | We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis. |
doi_str_mv | 10.1109/ICSICT.1995.499772 |
format | Conference Proceeding |
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The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</description><identifier>ISBN: 9780780330627</identifier><identifier>ISBN: 0780330625</identifier><identifier>DOI: 10.1109/ICSICT.1995.499772</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Charge-coupled image sensors ; Circuits ; Conductivity ; High-resolution imaging ; Image sensors ; Photodiodes ; Sampling methods ; Sensor arrays ; Switches</subject><ispartof>Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.163-165</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/499772$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/499772$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Youshu-Huang</creatorcontrib><creatorcontrib>Weian-Zhu</creatorcontrib><creatorcontrib>Qingyi He</creatorcontrib><creatorcontrib>Guolin-Lu</creatorcontrib><creatorcontrib>Peng-Lin</creatorcontrib><title>Study of a MOS imaging sensor with PIN structure</title><title>Proceedings of 4th International Conference on Solid-State and IC Technology</title><addtitle>ICSICT</addtitle><description>We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</description><subject>Capacitance</subject><subject>Charge-coupled image sensors</subject><subject>Circuits</subject><subject>Conductivity</subject><subject>High-resolution imaging</subject><subject>Image sensors</subject><subject>Photodiodes</subject><subject>Sampling methods</subject><subject>Sensor arrays</subject><subject>Switches</subject><isbn>9780780330627</isbn><isbn>0780330625</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpjYJAyNNAzNDSw1Pd0DvZ0DtEztLQ01TOxtDQ3N2Jm4LU0tzAAImNjAzMjcw4G3uLiLAMgMDE1Nba05GQwCC4pTalUyE9TSFTw9Q9WyMxNTM_MS1coTs0rzi9SKM8syVAI8PRTKC4pKk0uKS1K5WFgTUvMKU7lhdLcDFJuriHOHrqZqamp8QVFQAOKKuMh1hvjlQQA-QQy2Q</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Youshu-Huang</creator><creator>Weian-Zhu</creator><creator>Qingyi He</creator><creator>Guolin-Lu</creator><creator>Peng-Lin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Study of a MOS imaging sensor with PIN structure</title><author>Youshu-Huang ; Weian-Zhu ; Qingyi He ; Guolin-Lu ; Peng-Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_4997723</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Capacitance</topic><topic>Charge-coupled image sensors</topic><topic>Circuits</topic><topic>Conductivity</topic><topic>High-resolution imaging</topic><topic>Image sensors</topic><topic>Photodiodes</topic><topic>Sampling methods</topic><topic>Sensor arrays</topic><topic>Switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Youshu-Huang</creatorcontrib><creatorcontrib>Weian-Zhu</creatorcontrib><creatorcontrib>Qingyi He</creatorcontrib><creatorcontrib>Guolin-Lu</creatorcontrib><creatorcontrib>Peng-Lin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Youshu-Huang</au><au>Weian-Zhu</au><au>Qingyi He</au><au>Guolin-Lu</au><au>Peng-Lin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study of a MOS imaging sensor with PIN structure</atitle><btitle>Proceedings of 4th International Conference on Solid-State and IC Technology</btitle><stitle>ICSICT</stitle><date>1995</date><risdate>1995</risdate><spage>163</spage><epage>165</epage><pages>163-165</pages><isbn>9780780330627</isbn><isbn>0780330625</isbn><abstract>We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.1995.499772</doi></addata></record> |
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identifier | ISBN: 9780780330627 |
ispartof | Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.163-165 |
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language | eng |
recordid | cdi_ieee_primary_499772 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Capacitance Charge-coupled image sensors Circuits Conductivity High-resolution imaging Image sensors Photodiodes Sampling methods Sensor arrays Switches |
title | Study of a MOS imaging sensor with PIN structure |
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