Study of a MOS imaging sensor with PIN structure

We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.

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Hauptverfasser: Youshu-Huang, Weian-Zhu, Qingyi He, Guolin-Lu, Peng-Lin
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creator Youshu-Huang
Weian-Zhu
Qingyi He
Guolin-Lu
Peng-Lin
description We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.
doi_str_mv 10.1109/ICSICT.1995.499772
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_499772</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>499772</ieee_id><sourcerecordid>499772</sourcerecordid><originalsourceid>FETCH-ieee_primary_4997723</originalsourceid><addsrcrecordid>eNpjYJAyNNAzNDSw1Pd0DvZ0DtEztLQ01TOxtDQ3N2Jm4LU0tzAAImNjAzMjcw4G3uLiLAMgMDE1Nba05GQwCC4pTalUyE9TSFTw9Q9WyMxNTM_MS1coTs0rzi9SKM8syVAI8PRTKC4pKk0uKS1K5WFgTUvMKU7lhdLcDFJuriHOHrqZqamp8QVFQAOKKuMh1hvjlQQA-QQy2Q</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Study of a MOS imaging sensor with PIN structure</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Youshu-Huang ; Weian-Zhu ; Qingyi He ; Guolin-Lu ; Peng-Lin</creator><creatorcontrib>Youshu-Huang ; Weian-Zhu ; Qingyi He ; Guolin-Lu ; Peng-Lin</creatorcontrib><description>We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</description><identifier>ISBN: 9780780330627</identifier><identifier>ISBN: 0780330625</identifier><identifier>DOI: 10.1109/ICSICT.1995.499772</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Charge-coupled image sensors ; Circuits ; Conductivity ; High-resolution imaging ; Image sensors ; Photodiodes ; Sampling methods ; Sensor arrays ; Switches</subject><ispartof>Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.163-165</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/499772$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/499772$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Youshu-Huang</creatorcontrib><creatorcontrib>Weian-Zhu</creatorcontrib><creatorcontrib>Qingyi He</creatorcontrib><creatorcontrib>Guolin-Lu</creatorcontrib><creatorcontrib>Peng-Lin</creatorcontrib><title>Study of a MOS imaging sensor with PIN structure</title><title>Proceedings of 4th International Conference on Solid-State and IC Technology</title><addtitle>ICSICT</addtitle><description>We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</description><subject>Capacitance</subject><subject>Charge-coupled image sensors</subject><subject>Circuits</subject><subject>Conductivity</subject><subject>High-resolution imaging</subject><subject>Image sensors</subject><subject>Photodiodes</subject><subject>Sampling methods</subject><subject>Sensor arrays</subject><subject>Switches</subject><isbn>9780780330627</isbn><isbn>0780330625</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpjYJAyNNAzNDSw1Pd0DvZ0DtEztLQ01TOxtDQ3N2Jm4LU0tzAAImNjAzMjcw4G3uLiLAMgMDE1Nba05GQwCC4pTalUyE9TSFTw9Q9WyMxNTM_MS1coTs0rzi9SKM8syVAI8PRTKC4pKk0uKS1K5WFgTUvMKU7lhdLcDFJuriHOHrqZqamp8QVFQAOKKuMh1hvjlQQA-QQy2Q</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Youshu-Huang</creator><creator>Weian-Zhu</creator><creator>Qingyi He</creator><creator>Guolin-Lu</creator><creator>Peng-Lin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Study of a MOS imaging sensor with PIN structure</title><author>Youshu-Huang ; Weian-Zhu ; Qingyi He ; Guolin-Lu ; Peng-Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_4997723</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Capacitance</topic><topic>Charge-coupled image sensors</topic><topic>Circuits</topic><topic>Conductivity</topic><topic>High-resolution imaging</topic><topic>Image sensors</topic><topic>Photodiodes</topic><topic>Sampling methods</topic><topic>Sensor arrays</topic><topic>Switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Youshu-Huang</creatorcontrib><creatorcontrib>Weian-Zhu</creatorcontrib><creatorcontrib>Qingyi He</creatorcontrib><creatorcontrib>Guolin-Lu</creatorcontrib><creatorcontrib>Peng-Lin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Youshu-Huang</au><au>Weian-Zhu</au><au>Qingyi He</au><au>Guolin-Lu</au><au>Peng-Lin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study of a MOS imaging sensor with PIN structure</atitle><btitle>Proceedings of 4th International Conference on Solid-State and IC Technology</btitle><stitle>ICSICT</stitle><date>1995</date><risdate>1995</risdate><spage>163</spage><epage>165</epage><pages>163-165</pages><isbn>9780780330627</isbn><isbn>0780330625</isbn><abstract>We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.1995.499772</doi></addata></record>
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identifier ISBN: 9780780330627
ispartof Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.163-165
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Capacitance
Charge-coupled image sensors
Circuits
Conductivity
High-resolution imaging
Image sensors
Photodiodes
Sampling methods
Sensor arrays
Switches
title Study of a MOS imaging sensor with PIN structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T01%3A26%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Study%20of%20a%20MOS%20imaging%20sensor%20with%20PIN%20structure&rft.btitle=Proceedings%20of%204th%20International%20Conference%20on%20Solid-State%20and%20IC%20Technology&rft.au=Youshu-Huang&rft.date=1995&rft.spage=163&rft.epage=165&rft.pages=163-165&rft.isbn=9780780330627&rft.isbn_list=0780330625&rft_id=info:doi/10.1109/ICSICT.1995.499772&rft_dat=%3Cieee_6IE%3E499772%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=499772&rfr_iscdi=true