High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier

High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier

This paper presents the highest Qs (up to 24) reported for inductors integrated by using standard silicon technology with multi-level interconnects, and the implementation of such an inductor in an integrated 675 MHz, 100 mW power amplifier.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Burghartz, J.N., Soyuer, M., Jenkins, K.A., Hulvey, M.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
High power amplifiers
Inductance
Inductors
Integrated circuit interconnections
Microelectronics
Power amplifiers
Power generation
Radio frequency
Radiofrequency amplifiers
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents the highest Qs (up to 24) reported for inductors integrated by using standard silicon technology with multi-level interconnects, and the implementation of such an inductor in an integrated 675 MHz, 100 mW power amplifier.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499389