VGA driving with low temperature processed poly Si TFTs

VGA driving with low temperature processed poly Si TFTs

We have successfully driven a full monolithic LCD equivalent to a 5.6 inch VGA display with low temperature process poly-Si TFTs of which field effect mobility is 100 cm/sup 2//Vs for n-ch TFT, and 53 cm/sup 2//Vs for p-ch TFT. Laser crystallization and newly developed self aligning off-set gate pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Morita, T., Yamamoto, Y., Itoh, M., Yoneda, H., Yamane, Y., Tsuchimoto, S., Funada, F., Awane, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Active matrix liquid crystal displays
Aluminum
Annealing
Crystallization
Doping
Electrodes
Oxidation
Plasma temperature
Space technology
Thin film transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have successfully driven a full monolithic LCD equivalent to a 5.6 inch VGA display with low temperature process poly-Si TFTs of which field effect mobility is 100 cm/sup 2//Vs for n-ch TFT, and 53 cm/sup 2//Vs for p-ch TFT. Laser crystallization and newly developed self aligning off-set gate processing are implemented.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499348