Lateral backward diodes as strain sensors

Lateral backward diodes as strain sensors

We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature...

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Bibliographische Detailangaben
Hauptverfasser: Friedrich, A.P., Besse, P.A., Fullin, E., Popovic, R.S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
Diodes
Doping
Fabrication
Piezoresistive devices
Silicon
Strain measurement
Temperature sensors
Tunneling
Voltage
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Beschreibung
Zusammenfassung:We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499292