Fabrication of Multilayered / Thin Films and Their Flux Pinning Properties

We prepared the multilayered MgB 2 /Ni thin films with the Ni layer spacings of 32, 23 and 16 nm. The MgB 2 /Ni multilayer nanostructure was confirmed to be obtained from the scanning transmission electron microscope observation. The clear enhancement of J c was observed in the multilayered MgB 2 /N...

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Veröffentlicht in:	IEEE transactions on applied superconductivity 2009-06, Vol.19 (3), p.2807-2810
Hauptverfasser:	Tsukano, Y., Doi, T., Yamashita, H., Tanaka, A., Iwasaki, I., Hakuraku, Y., Kitaguchi, H., Takahashi, K.-i., Sosiati, H., Hata, S., Ikeda, K.-i., Nakashima, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial pinning Coaxial components electron beam evaporation Electron beams Fabrication Flux pinning Grain boundaries High temperature superconductors Magnetic fields Superconducting thin films Superconductivity superconductors thin films Transistors {\rm MgB}_{2}
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Beschreibung
Zusammenfassung:	We prepared the multilayered MgB 2 /Ni thin films with the Ni layer spacings of 32, 23 and 16 nm. The MgB 2 /Ni multilayer nanostructure was confirmed to be obtained from the scanning transmission electron microscope observation. The clear enhancement of J c was observed in the multilayered MgB 2 /Ni thin film when the magnetic field was applied parallel to the film surface. Moreover, the peak position of F p - B curves shifted to higher magnetic field with decreasing the Ni layer spacing.
ISSN:	1051-8223 1558-2515
DOI:	10.1109/TASC.2009.2018527