1.2 V operation 1.1 W heterojunction FET for portable radio applications
This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficie...
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| creator | Inosako, K. Iwata, N. Kuzuhara, M. |
| description | This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications. |
| doi_str_mv | 10.1109/IEDM.1995.497210 |
| format | Conference Proceeding |
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A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780327004</identifier><identifier>ISBN: 9780780327009</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1995.497210</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; FETs ; Heterojunctions ; Intrusion detection ; Laboratories ; Low voltage ; National electric code ; Power generation ; Thermal resistance</subject><ispartof>Proceedings of International Electron Devices Meeting, 1995, p.185-188</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/497210$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/497210$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Inosako, K.</creatorcontrib><creatorcontrib>Iwata, N.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><title>1.2 V operation 1.1 W heterojunction FET for portable radio applications</title><title>Proceedings of International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.</description><subject>Breakdown voltage</subject><subject>FETs</subject><subject>Heterojunctions</subject><subject>Intrusion detection</subject><subject>Laboratories</subject><subject>Low voltage</subject><subject>National electric code</subject><subject>Power generation</subject><subject>Thermal resistance</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780327004</isbn><isbn>9780780327009</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrGOwjAQBVccSISDHlHtD8TsOgnGNXCCgg7dXYcMOMIoYMsJBX8PAmqqJ81opAcwZBLMpMerxXwtWOtC5FpJphYkkotJSqz-v6BHakqZVER5GxLiSZay5mkXenV9IpKq0EUCSxYSf9EHG03j_AVZMP7h0TY2-tP1sn_Cn8UGSx8x-NiYXWUxmoPzaEKo3P7Z1X3olKaq7eC93zB6VLNl6qy12xDd2cTb9nU0-yjvAoo8wg</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Inosako, K.</creator><creator>Iwata, N.</creator><creator>Kuzuhara, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>1.2 V operation 1.1 W heterojunction FET for portable radio applications</title><author>Inosako, K. ; Iwata, N. ; Kuzuhara, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_4972103</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Breakdown voltage</topic><topic>FETs</topic><topic>Heterojunctions</topic><topic>Intrusion detection</topic><topic>Laboratories</topic><topic>Low voltage</topic><topic>National electric code</topic><topic>Power generation</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Inosako, K.</creatorcontrib><creatorcontrib>Iwata, N.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Inosako, K.</au><au>Iwata, N.</au><au>Kuzuhara, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>1.2 V operation 1.1 W heterojunction FET for portable radio applications</atitle><btitle>Proceedings of International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1995</date><risdate>1995</risdate><spage>185</spage><epage>188</epage><pages>185-188</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780327004</isbn><isbn>9780780327009</isbn><abstract>This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1995.497210</doi></addata></record> |
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| identifier | ISSN: 0163-1918 |
| ispartof | Proceedings of International Electron Devices Meeting, 1995, p.185-188 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_497210 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage FETs Heterojunctions Intrusion detection Laboratories Low voltage National electric code Power generation Thermal resistance |
| title | 1.2 V operation 1.1 W heterojunction FET for portable radio applications |
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