1.2 V operation 1.1 W heterojunction FET for portable radio applications

1.2 V operation 1.1 W heterojunction FET for portable radio applications

This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficie...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Inosako, K., Iwata, N., Kuzuhara, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
FETs
Heterojunctions
Intrusion detection
Laboratories
Low voltage
National electric code
Power generation
Thermal resistance
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.497210