A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs

A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs

This paper presents a detailed study on hot-carrier induced luminescence and degradation of bulk and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin t...

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Bibliographische Detailangaben
Hauptverfasser: Selmi, L., Pavesi, M., Hon-Sum Wong, Acovic, A., Sangiorgi, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Degradation
Hot carrier effects
Hot carriers
Implants
Luminescence
Monitoring
MOSFETs
Physics
Silicon
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Beschreibung
Zusammenfassung:This paper presents a detailed study on hot-carrier induced luminescence and degradation of bulk and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.497180