A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology
This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplif...
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creator | Hang-Kiong Lee King-CS, A. Fuad, H.-M. Chong-CK, T. |
description | This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplifier module exhibits a noise figure of 0.8dB across cellular band (0.8-1GHz) with gain (S 21 ) of 31dB on a single 5V supply and 2.8V control voltage while consuming 520mA of total current. 1 watt output power can be achieved in the balanced configuration with output third order intermodulation distortion (OIP3) of 46dBm. The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm 2 and is housed in a miniature 5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chip-on-board (MCOB) module. |
doi_str_mv | 10.1109/APMC.2008.4957890 |
format | Conference Proceeding |
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The low noise balanced amplifier module exhibits a noise figure of 0.8dB across cellular band (0.8-1GHz) with gain (S 21 ) of 31dB on a single 5V supply and 2.8V control voltage while consuming 520mA of total current. 1 watt output power can be achieved in the balanced configuration with output third order intermodulation distortion (OIP3) of 46dBm. The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm 2 and is housed in a miniature 5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chip-on-board (MCOB) module.</description><identifier>ISSN: 2165-4727</identifier><identifier>ISBN: 9781424426416</identifier><identifier>ISBN: 1424426413</identifier><identifier>EISSN: 2165-4743</identifier><identifier>EISBN: 9781424426423</identifier><identifier>EISBN: 1424426421</identifier><identifier>DOI: 10.1109/APMC.2008.4957890</identifier><identifier>LCCN: 2008905035</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electron mobility ; HEMTs ; Linearity ; Low-noise amplifiers ; MODFETs ; Noise figure ; PHEMTs ; Poles and towers ; Power generation ; Voltage control</subject><ispartof>2008 Asia-Pacific Microwave Conference, 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4957890$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4957890$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hang-Kiong Lee</creatorcontrib><creatorcontrib>King-CS, A.</creatorcontrib><creatorcontrib>Fuad, H.-M.</creatorcontrib><creatorcontrib>Chong-CK, T.</creatorcontrib><title>A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology</title><title>2008 Asia-Pacific Microwave Conference</title><addtitle>APMC</addtitle><description>This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. 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The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm 2 and is housed in a miniature 5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chip-on-board (MCOB) module.</description><subject>Electron mobility</subject><subject>HEMTs</subject><subject>Linearity</subject><subject>Low-noise amplifiers</subject><subject>MODFETs</subject><subject>Noise figure</subject><subject>PHEMTs</subject><subject>Poles and towers</subject><subject>Power generation</subject><subject>Voltage control</subject><issn>2165-4727</issn><issn>2165-4743</issn><isbn>9781424426416</isbn><isbn>1424426413</isbn><isbn>9781424426423</isbn><isbn>1424426421</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkEtLAzEQgOOjYK39AeIlN09b89rN5lhKtUKLHnovMTvZRtKk7APpn_G3GmsROoeZgfnmgxmE7imZUErU0_R9NZswQsqJULksFblAYyVLKpgQrBCMX6Iho0WeCSn41dmMFtf_MyYH6PZXo0hOeH6Dxm37SVKInBdSDtH3FPv4hUN0LWDr6r4BvHX1FnsXQDeuO-AP7XUwUGG923tnHTR4F6veJz422ID3vddNwkKVUtK0ne5cDI8t7uLXke5Dd7av96kzRwr3rQs1nmfJCXi_mK_WuAOzDdHH-nCHBlb7FsanOkLr5_l6tsiWby-vs-kyc4p0mZK65FqQ3BJh0mm6YopRC4KUklsKpuK21MAN5UxLXRRgNakUSMKMYBXhI_Twp3UAsNk3bqebw-b0ef4D7s1zqA</recordid><startdate>200812</startdate><enddate>200812</enddate><creator>Hang-Kiong Lee</creator><creator>King-CS, A.</creator><creator>Fuad, H.-M.</creator><creator>Chong-CK, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200812</creationdate><title>A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology</title><author>Hang-Kiong Lee ; King-CS, A. ; Fuad, H.-M. ; Chong-CK, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-97a83a405f04c045ad2921fe40873f1ecd3f8ae3c132a7a66efa0d9e702c42d03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electron mobility</topic><topic>HEMTs</topic><topic>Linearity</topic><topic>Low-noise amplifiers</topic><topic>MODFETs</topic><topic>Noise figure</topic><topic>PHEMTs</topic><topic>Poles and towers</topic><topic>Power generation</topic><topic>Voltage control</topic><toplevel>online_resources</toplevel><creatorcontrib>Hang-Kiong Lee</creatorcontrib><creatorcontrib>King-CS, A.</creatorcontrib><creatorcontrib>Fuad, H.-M.</creatorcontrib><creatorcontrib>Chong-CK, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hang-Kiong Lee</au><au>King-CS, A.</au><au>Fuad, H.-M.</au><au>Chong-CK, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology</atitle><btitle>2008 Asia-Pacific Microwave Conference</btitle><stitle>APMC</stitle><date>2008-12</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>2165-4727</issn><eissn>2165-4743</eissn><isbn>9781424426416</isbn><isbn>1424426413</isbn><eisbn>9781424426423</eisbn><eisbn>1424426421</eisbn><abstract>This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplifier module exhibits a noise figure of 0.8dB across cellular band (0.8-1GHz) with gain (S 21 ) of 31dB on a single 5V supply and 2.8V control voltage while consuming 520mA of total current. 1 watt output power can be achieved in the balanced configuration with output third order intermodulation distortion (OIP3) of 46dBm. The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm 2 and is housed in a miniature 5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chip-on-board (MCOB) module.</abstract><pub>IEEE</pub><doi>10.1109/APMC.2008.4957890</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 2165-4727 |
ispartof | 2008 Asia-Pacific Microwave Conference, 2008, p.1-4 |
issn | 2165-4727 2165-4743 |
language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Electron mobility HEMTs Linearity Low-noise amplifiers MODFETs Noise figure PHEMTs Poles and towers Power generation Voltage control |
title | A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology |
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