A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology
This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplif...
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Sprache: | eng |
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Zusammenfassung: | This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplifier module exhibits a noise figure of 0.8dB across cellular band (0.8-1GHz) with gain (S 21 ) of 31dB on a single 5V supply and 2.8V control voltage while consuming 520mA of total current. 1 watt output power can be achieved in the balanced configuration with output third order intermodulation distortion (OIP3) of 46dBm. The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm 2 and is housed in a miniature 5.0 x 6.0 x 1.1 mm 3 22-lead multiple-chip-on-board (MCOB) module. |
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ISSN: | 2165-4727 2165-4743 |
DOI: | 10.1109/APMC.2008.4957890 |