High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding

High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding

A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tu, S.L., Tam, G., Tam, P.M., Taomoto, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Buffer layers
Charge carrier lifetime
Doping
Implants
Insulated gate bipolar transistors
Insulation
Medical simulation
Silicon
Voltage control
Wafer bonding
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.
DOI:10.1109/BIPOL.1995.493899