VBIC95: An improved vertical, IC bipolar transistor model

This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.

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Bibliographische Detailangaben
Hauptverfasser:	McAndrew, C., Seitchik, J., Bowers, D., Dunn, M., Foisy, M., Getreu, I., McSwain, M., Moinian, S., Parker, J., van Wijnen, P., Wagner, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar integrated circuits Bipolar transistors Cathode ray tubes Educational institutions Instruments Integrated circuit modeling SPICE Substrates Temperature Testing
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Beschreibung
Zusammenfassung:	This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.
DOI:	10.1109/BIPOL.1995.493891