A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography

A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography

Emitter widths of 0.3 /spl mu/m on double-polysilicon bipolar transistors are achieved using 0.8-/spl mu/m photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f/sub...

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Hauptverfasser: Tsai, C., Scharf, B., Garone, P., Humphries, P., O, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Costs
Electric variables measurement
Etching
Lithography
Low-noise amplifiers
Plasma applications
Plasma temperature
Radio frequency
Space technology
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Zusammenfassung:Emitter widths of 0.3 /spl mu/m on double-polysilicon bipolar transistors are achieved using 0.8-/spl mu/m photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f/sub T/ and f/sub max/.
DOI:10.1109/BIPOL.1995.493875