A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications

A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integ...

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Hauptverfasser:	Nguyen-Ngoc, D., Harame, D.L., Malinowski, J.C., Jeng, S.J., Schonenberg, K.T., Gilbert, M.M., Berg, G.D., Wu, S., Soyuer, M., Tallman, K.A., Stein, K.J., Groves, R.A., Subbanna, S., Colavito, D.B., Sunderland, D.A., Meyerson, B.S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits CMOS analog integrated circuits CMOS technology Fabrication Germanium silicon alloys Heterojunction bipolar transistors Random access memory Ring oscillators Silicon germanium Substrates
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Beschreibung
Zusammenfassung:	A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.
DOI:	10.1109/BIPOL.1995.493873