Transient electro-thermal modelling of AlGas/GaAs HBTs

This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix...

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Bibliographische Detailangaben
Hauptverfasser:	Russell, I.A.D., Webb, P.W., Davis, R.G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation Distributed parameter circuits Gallium arsenide Heterojunction bipolar transistors Power system modeling Power system transients Power transmission lines SPICE Temperature distribution Transmission line matrix methods
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Beschreibung
Zusammenfassung:	This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.
DOI:	10.1109/EDMO.1995.493705