Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET show...

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Veröffentlicht in:IEEE transactions on electron devices 2009-07, Vol.56 (7), p.1538-1542
Hauptverfasser: SHIN, Changhwan, XIN SUN, LIU, Tsu-Jae King
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Devices
Doping
Drains
Electrical engineering
Electronics
Exact sciences and technology
Gates
Logic gates
MOSFET circuits
MOSFETs
Multigate FET
random-dopant fluctuations (RDFs)
Resource description format
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Simulation
Three dimensional
Transistors
Tuning
variability
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Beschreibung
Zusammenfassung:A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (V th ) lowering and variation. RDF effects are found to be caused primarily by body RDF. The trigate bulk MOSFET offers a new method of V TH adjustment, via tuning of the retrograde body doping depth, to mitigate tradeoffs in V TH variation and short-channel effect control.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2020321