Preparation of nanocrystalline silicon thin film at high pressure and fast rate by PECVD technique

Hydrogenated Nano-crystalline silicon thin films with deposition rate of 0.4nm/s were prepared by conventional plasma enhanced chemical vapor deposition technique under the high deposition pressure (133∼266Pa), which were characterized and analyzed by Raman spectra and IR spectra. The results showed the average grain size is about 6nm, dark-conductivity value is about 10 −4 10 −3 Ω −1 . cm −1 ; The FTIR spectra showed that the bonds of Si-C, Si-O, or Si-N have not been found, the Si-H bond disappears gradually with the crystallinity increasing.