Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those expe...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1996-04, Vol.43 (2), p.533-545 |
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| container_title | IEEE Transactions on Nuclear Science |
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| creator | Titus, J.L. Wheatley, C.F. |
| description | Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided. |
| doi_str_mv | 10.1109/23.490899 |
| format | Article |
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This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.</description><subject>COSMIC RADIATION</subject><subject>Electrodes</subject><subject>Energy management</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Insulated gate bipolar transistors</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>Neck</subject><subject>PERFORMANCE TESTING</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Power semiconductor switches</subject><subject>Pulse power systems</subject><subject>SPACE FLIGHT</subject><subject>Space technology</subject><subject>Substrates</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqF0TtPwzAQAGALgUQpDKxMZkFiSIkd27FHhMpDKuoAiNFynGsxSpNgOwX-PUapWJms8313Ot0hdEryGSG5uqLFjKlcKrWHJoRzmRFeyn00yXMiM8WUOkRHIbynkPGcT9Dr_KsH7zbQRtPgEIfaQcDdCgfXrhvIYJsyeG0iYD_0cfCATVvjavBtN0TsWrwFH51NxX33CR4_Lp9u58_hGB2sTBPgZPdO0Uv6vrnPFsu7h5vrRWapEDEDWxkwFbGKW7NixHJmeU1qVVFZl9IUuQFR1dRIqcpKga3T3IxUynJSy4IWU3Q-9u1CdDpYF8G-2a5twUZNGWVFkczFaHrffQwQot64YKFpTAvdEDSVpWBKiP-hYEKVVCV4OULruxA8rHSfdmj8tya5_r2DpoUe75Ds2WgdAPy5XfIH_WODiw</recordid><startdate>19960401</startdate><enddate>19960401</enddate><creator>Titus, J.L.</creator><creator>Wheatley, C.F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19960401</creationdate><title>Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs</title><author>Titus, J.L. ; Wheatley, C.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c266t-ecbaeab1c95caf41c54c5d1d9b28d78a30ae6bd2a8897b9ecd14541b9c51d8323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>COSMIC RADIATION</topic><topic>Electrodes</topic><topic>Energy management</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Insulated gate bipolar transistors</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>Neck</topic><topic>PERFORMANCE TESTING</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Power semiconductor switches</topic><topic>Pulse power systems</topic><topic>SPACE FLIGHT</topic><topic>Space technology</topic><topic>Substrates</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Titus, J.L.</creatorcontrib><creatorcontrib>Wheatley, C.F.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Titus, J.L.</au><au>Wheatley, C.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1996-04-01</date><risdate>1996</risdate><volume>43</volume><issue>2</issue><spage>533</spage><epage>545</epage><pages>533-545</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. 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| ispartof | IEEE Transactions on Nuclear Science, 1996-04, Vol.43 (2), p.533-545 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | COSMIC RADIATION Electrodes Energy management INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Insulated gate bipolar transistors MOSFET MOSFET circuits Neck PERFORMANCE TESTING PHYSICAL RADIATION EFFECTS Power semiconductor switches Pulse power systems SPACE FLIGHT Space technology Substrates Voltage |
| title | Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs |
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