Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those expe...

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Veröffentlicht in:IEEE Transactions on Nuclear Science 1996-04, Vol.43 (2), p.533-545
Hauptverfasser: Titus, J.L., Wheatley, C.F.
Format: Artikel
Sprache:eng
Schlagworte:
COSMIC RADIATION
Electrodes
Energy management
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Insulated gate bipolar transistors
MOSFET
MOSFET circuits
Neck
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
Power semiconductor switches
Pulse power systems
SPACE FLIGHT
Space technology
Substrates
Voltage
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Beschreibung
Zusammenfassung:Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.490899