Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction o...

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Hauptverfasser: Ortolland, C., Mathew, S., Duffy, R., Saino, K., Kim, C.S., Mertens, S., Horiguchi, N., Vrancken, C., Chiarella, T., Kerner, C., Absil, P.P., Lauwers, A., Biesemans, S., Hoffmann, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Contact resistance
Dielectric substrates
Implants
MOS devices
Random access memory
Silicides
Simulated annealing
Switches
Thermal engineering
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Zusammenfassung:Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction of 25% compared to the conventional contact scheme.
DOI:10.1109/ULIS.2009.4897559