Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1844-1849
Hauptverfasser:	Marshall, P.W., Dale, C.J., Weatherford, T.R., La Macchia, M., LaBel, K.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS technology Extraterrestrial measurements FETs FIELD EFFECT TRANSISTORS Gallium arsenide GALLIUM ARSENIDES HEAVY IONS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Insulation Laboratories LOGIC CIRCUITS Logic testing MESFETs MITIGATION PERFORMANCE TESTING PHYSICAL RADIATION EFFECTS PROTONS Space technology
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