Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1844-1849
Hauptverfasser: Marshall, P.W., Dale, C.J., Weatherford, T.R., La Macchia, M., LaBel, K.A.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS technology
Extraterrestrial measurements
FETs
FIELD EFFECT TRANSISTORS
Gallium arsenide
GALLIUM ARSENIDES
HEAVY IONS
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Insulation
Laboratories
LOGIC CIRCUITS
Logic testing
MESFETs
MITIGATION
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PROTONS
Space technology
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Beschreibung
Zusammenfassung:Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.489225