RF analog and digital circuits in SiGe technology
The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed d...
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creator | Long, J.R. Copeland, M.A. Kovacic, S.J. Malhi, D.S. Harame, D.L. |
description | The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options. |
doi_str_mv | 10.1109/ISSCC.1996.488523 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_488523</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>488523</ieee_id><sourcerecordid>488523</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-99b71f3a6fb2c2feb8c65fd5c3c0a7cc5a19555788725efb0575d4d8176a3d1a3</originalsourceid><addsrcrecordid>eNotj9tKw0AURQcvYKz9AH2aH0icM6dnLo8SbC0UBKPPZTKXOhJTSeJD_95AhQXrZbFhM3YPogIQ9nHbNHVdgbWqWhlDEi9YIVGr0iihLtnSaiNmEAEVXbFCgMVSEYobdjuOX0IIssoUDN7W3PWuOx5mBR7yIU-u4z4P_jdPI889b_Im8in6z_44Z6c7dp1cN8blvxfsY_38Xr-Uu9fNtn7alRm0nEprWw0JnUqt9DLF1nhFKZBHL5z2nhxYItLGaEkxtYI0hVUwoJXDAA4X7OG8m2OM-58hf7vhtD-fxT99gEWG</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>RF analog and digital circuits in SiGe technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</creator><creatorcontrib>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</creatorcontrib><description>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</description><identifier>ISSN: 0193-6530</identifier><identifier>ISBN: 9780780331365</identifier><identifier>ISBN: 0780331362</identifier><identifier>EISSN: 2376-8606</identifier><identifier>DOI: 10.1109/ISSCC.1996.488523</identifier><language>eng</language><publisher>IEEE</publisher><subject>Digital circuits ; Energy consumption ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Impedance ; Noise figure ; Preamplifiers ; Radio frequency ; Silicon germanium ; Voltage</subject><ispartof>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC, 1996, p.82-83</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/488523$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/488523$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Long, J.R.</creatorcontrib><creatorcontrib>Copeland, M.A.</creatorcontrib><creatorcontrib>Kovacic, S.J.</creatorcontrib><creatorcontrib>Malhi, D.S.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><title>RF analog and digital circuits in SiGe technology</title><title>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC</title><addtitle>ISSCC</addtitle><description>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</description><subject>Digital circuits</subject><subject>Energy consumption</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance</subject><subject>Noise figure</subject><subject>Preamplifiers</subject><subject>Radio frequency</subject><subject>Silicon germanium</subject><subject>Voltage</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>9780780331365</isbn><isbn>0780331362</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9tKw0AURQcvYKz9AH2aH0icM6dnLo8SbC0UBKPPZTKXOhJTSeJD_95AhQXrZbFhM3YPogIQ9nHbNHVdgbWqWhlDEi9YIVGr0iihLtnSaiNmEAEVXbFCgMVSEYobdjuOX0IIssoUDN7W3PWuOx5mBR7yIU-u4z4P_jdPI889b_Im8in6z_44Z6c7dp1cN8blvxfsY_38Xr-Uu9fNtn7alRm0nEprWw0JnUqt9DLF1nhFKZBHL5z2nhxYItLGaEkxtYI0hVUwoJXDAA4X7OG8m2OM-58hf7vhtD-fxT99gEWG</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Long, J.R.</creator><creator>Copeland, M.A.</creator><creator>Kovacic, S.J.</creator><creator>Malhi, D.S.</creator><creator>Harame, D.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>RF analog and digital circuits in SiGe technology</title><author>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-99b71f3a6fb2c2feb8c65fd5c3c0a7cc5a19555788725efb0575d4d8176a3d1a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Digital circuits</topic><topic>Energy consumption</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance</topic><topic>Noise figure</topic><topic>Preamplifiers</topic><topic>Radio frequency</topic><topic>Silicon germanium</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Long, J.R.</creatorcontrib><creatorcontrib>Copeland, M.A.</creatorcontrib><creatorcontrib>Kovacic, S.J.</creatorcontrib><creatorcontrib>Malhi, D.S.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Long, J.R.</au><au>Copeland, M.A.</au><au>Kovacic, S.J.</au><au>Malhi, D.S.</au><au>Harame, D.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>RF analog and digital circuits in SiGe technology</atitle><btitle>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC</btitle><stitle>ISSCC</stitle><date>1996</date><risdate>1996</risdate><spage>82</spage><epage>83</epage><pages>82-83</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9780780331365</isbn><isbn>0780331362</isbn><abstract>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.1996.488523</doi><tpages>2</tpages></addata></record> |
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identifier | ISSN: 0193-6530 |
ispartof | 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC, 1996, p.82-83 |
issn | 0193-6530 2376-8606 |
language | eng |
recordid | cdi_ieee_primary_488523 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Digital circuits Energy consumption Germanium silicon alloys Heterojunction bipolar transistors Impedance Noise figure Preamplifiers Radio frequency Silicon germanium Voltage |
title | RF analog and digital circuits in SiGe technology |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T00%3A27%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=RF%20analog%20and%20digital%20circuits%20in%20SiGe%20technology&rft.btitle=1996%20IEEE%20International%20Solid-State%20Circuits%20Conference.%20Digest%20of%20TEchnical%20Papers,%20ISSCC&rft.au=Long,%20J.R.&rft.date=1996&rft.spage=82&rft.epage=83&rft.pages=82-83&rft.issn=0193-6530&rft.eissn=2376-8606&rft.isbn=9780780331365&rft.isbn_list=0780331362&rft_id=info:doi/10.1109/ISSCC.1996.488523&rft_dat=%3Cieee_6IE%3E488523%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=488523&rfr_iscdi=true |