RF analog and digital circuits in SiGe technology

The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Long, J.R., Copeland, M.A., Kovacic, S.J., Malhi, D.S., Harame, D.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 83
container_issue
container_start_page 82
container_title
container_volume
creator Long, J.R.
Copeland, M.A.
Kovacic, S.J.
Malhi, D.S.
Harame, D.L.
description The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.
doi_str_mv 10.1109/ISSCC.1996.488523
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_488523</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>488523</ieee_id><sourcerecordid>488523</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-99b71f3a6fb2c2feb8c65fd5c3c0a7cc5a19555788725efb0575d4d8176a3d1a3</originalsourceid><addsrcrecordid>eNotj9tKw0AURQcvYKz9AH2aH0icM6dnLo8SbC0UBKPPZTKXOhJTSeJD_95AhQXrZbFhM3YPogIQ9nHbNHVdgbWqWhlDEi9YIVGr0iihLtnSaiNmEAEVXbFCgMVSEYobdjuOX0IIssoUDN7W3PWuOx5mBR7yIU-u4z4P_jdPI889b_Im8in6z_44Z6c7dp1cN8blvxfsY_38Xr-Uu9fNtn7alRm0nEprWw0JnUqt9DLF1nhFKZBHL5z2nhxYItLGaEkxtYI0hVUwoJXDAA4X7OG8m2OM-58hf7vhtD-fxT99gEWG</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>RF analog and digital circuits in SiGe technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</creator><creatorcontrib>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</creatorcontrib><description>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</description><identifier>ISSN: 0193-6530</identifier><identifier>ISBN: 9780780331365</identifier><identifier>ISBN: 0780331362</identifier><identifier>EISSN: 2376-8606</identifier><identifier>DOI: 10.1109/ISSCC.1996.488523</identifier><language>eng</language><publisher>IEEE</publisher><subject>Digital circuits ; Energy consumption ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Impedance ; Noise figure ; Preamplifiers ; Radio frequency ; Silicon germanium ; Voltage</subject><ispartof>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC, 1996, p.82-83</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/488523$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/488523$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Long, J.R.</creatorcontrib><creatorcontrib>Copeland, M.A.</creatorcontrib><creatorcontrib>Kovacic, S.J.</creatorcontrib><creatorcontrib>Malhi, D.S.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><title>RF analog and digital circuits in SiGe technology</title><title>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC</title><addtitle>ISSCC</addtitle><description>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</description><subject>Digital circuits</subject><subject>Energy consumption</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance</subject><subject>Noise figure</subject><subject>Preamplifiers</subject><subject>Radio frequency</subject><subject>Silicon germanium</subject><subject>Voltage</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>9780780331365</isbn><isbn>0780331362</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9tKw0AURQcvYKz9AH2aH0icM6dnLo8SbC0UBKPPZTKXOhJTSeJD_95AhQXrZbFhM3YPogIQ9nHbNHVdgbWqWhlDEi9YIVGr0iihLtnSaiNmEAEVXbFCgMVSEYobdjuOX0IIssoUDN7W3PWuOx5mBR7yIU-u4z4P_jdPI889b_Im8in6z_44Z6c7dp1cN8blvxfsY_38Xr-Uu9fNtn7alRm0nEprWw0JnUqt9DLF1nhFKZBHL5z2nhxYItLGaEkxtYI0hVUwoJXDAA4X7OG8m2OM-58hf7vhtD-fxT99gEWG</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Long, J.R.</creator><creator>Copeland, M.A.</creator><creator>Kovacic, S.J.</creator><creator>Malhi, D.S.</creator><creator>Harame, D.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>RF analog and digital circuits in SiGe technology</title><author>Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-99b71f3a6fb2c2feb8c65fd5c3c0a7cc5a19555788725efb0575d4d8176a3d1a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Digital circuits</topic><topic>Energy consumption</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance</topic><topic>Noise figure</topic><topic>Preamplifiers</topic><topic>Radio frequency</topic><topic>Silicon germanium</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Long, J.R.</creatorcontrib><creatorcontrib>Copeland, M.A.</creatorcontrib><creatorcontrib>Kovacic, S.J.</creatorcontrib><creatorcontrib>Malhi, D.S.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Long, J.R.</au><au>Copeland, M.A.</au><au>Kovacic, S.J.</au><au>Malhi, D.S.</au><au>Harame, D.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>RF analog and digital circuits in SiGe technology</atitle><btitle>1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC</btitle><stitle>ISSCC</stitle><date>1996</date><risdate>1996</risdate><spage>82</spage><epage>83</epage><pages>82-83</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9780780331365</isbn><isbn>0780331362</isbn><abstract>The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.1996.488523</doi><tpages>2</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0193-6530
ispartof 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC, 1996, p.82-83
issn 0193-6530
2376-8606
language eng
recordid cdi_ieee_primary_488523
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Digital circuits
Energy consumption
Germanium silicon alloys
Heterojunction bipolar transistors
Impedance
Noise figure
Preamplifiers
Radio frequency
Silicon germanium
Voltage
title RF analog and digital circuits in SiGe technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T00%3A27%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=RF%20analog%20and%20digital%20circuits%20in%20SiGe%20technology&rft.btitle=1996%20IEEE%20International%20Solid-State%20Circuits%20Conference.%20Digest%20of%20TEchnical%20Papers,%20ISSCC&rft.au=Long,%20J.R.&rft.date=1996&rft.spage=82&rft.epage=83&rft.pages=82-83&rft.issn=0193-6530&rft.eissn=2376-8606&rft.isbn=9780780331365&rft.isbn_list=0780331362&rft_id=info:doi/10.1109/ISSCC.1996.488523&rft_dat=%3Cieee_6IE%3E488523%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=488523&rfr_iscdi=true